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| STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045 - 80A - DPAK - IPAK Planar STripFETTM MOSFET General features Type STD100N03L STD100N03L-1 Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 80 A(1) 110 W <0.0055 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is the latest refinement of STMicroelectronic unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters. Internal schematic diagram Applications HIGH CURRENT, HIGH SWITCHING DC-DC CONVERTER AUTOMOTIVE Order codes Sales Type STD100N03LT4 STD100N03L-1 Marking D100N03L D100N03L-1 Package DPAK IPAK Packaging TAPE & REEL TUBE September 2005 Rev 2 1/14 www.st.com 14 1 Electrical ratings STD100N03L - STD100N03L-1 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-Source Voltage (VGS = 0) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Value 30 20 80 70 320 110 0.73 3.9 -55 to 175 Unit V V A A A W W/C V/ns C Symbol VDS VGS ID Note 1 ID IDM Note 2 PTOT dv/dt Note 3 Peak Diode Recovery Voltage Slope Tj Tstg Operating Junction Temperature Storage Temperature Table 2. Rthj-case Rthj-amb Tl Thermal Data Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose (for 10sec. 1.6 mm from case) 1.36 100 275 C/W C/W C Table 3. Symbol IAV EAS Avalanche characteristics Parameter Not-Repetitive Avalanche Current (pulse width limited by Tj max) Single pulsed avalanche Energy (starting Tj=25C, ID=IAV, VDD = 24V Value 40 Unit A 500 mJ 2/14 STD100N03L - STD100N03L-1 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS On/Off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Static Drain-Source On Resistance Test Conditions ID = 250A, V GS= 0 VDS = Max Rating, VDS = Max Rating, Tc=125C VDS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 40 A VGS= 5 V, ID= 20 A VGS= 10 V, ID= 40 A @125C VGS= 5 V, ID= 20 A @125C 1 0.0045 0.008 0.0068 0.0146 0.0055 0.01 Min. 30 10 100 200 Typ. Max. Unit V A A nA V IGSS VGS(th) RDS(on) RDS(on) Table 5. Symbol gfs Note 4 Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Forward Transconductance Test Conditions VDS = 10 V, ID= 15 A Min. Typ. 31 2060 728 67 20 7 7.5 27 Max. Unit S pF pF pF nC nC nC Input Capacitance VDS = 25V, f = 1 MHz, V GS =0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24 V, ID = 80 A, VGS = 5V (see Figure 15) f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Gate Input Resistance 1.9 Table 6. Symbol td(on) tr td(off) tf Switching time Parameter Turn-on Delay Time Rise Time Test Conditions VDD = 15 V, ID = 40 A RG= 4.7 , VGS= 10V, (see Figure 14) VDD = 15 V, ID = 40 A RG= 4.7 , VGS= 10V, (see Figure 14) Min. Typ. 9 205 Max. Unit ns ns Turn-off Delay Time Fall Time 31 35 ns ns 3/14 2 Electrical characteristics STD100N03L - STD100N03L-1 Table 7. Symbol ISD Source-Drain Diode Parameter Test Conditions Min. Typ. Max. 80 320 ISD = 40 A, V GS = 0 ISD = 80 A, di/dt = 100 A/s VDD = 25 V, Tj = 150 C (see Figure 16) 40 40 2 1.3 Unit A A V ns nC A Source-Drain Current ISDMNote 2 Source-Drain Current (pulsed) VSD Note 4 trr Qrr IRRM Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current (1) Current limited by package. (2) Pulse width limited by safe operating area (3) ISD 80A, di/dt 360 A/s, VDS V(BR)DSS , Tj TjMAX (4) Pulsed: Pulse duration = 300 s, duty cycle 1.5% 4/14 STD100N03L - STD100N03L-1 2 Electrical characteristics 2.1 Electrical characteristics (curves) Safe Operating Area Figure 2. Thermal Impedance Figure 1. Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Transconductance Figure 6. Static Drain-source on Resistance 5/14 2 Electrical characteristics STD100N03L - STD100N03L-1 Figure 8. Capacitance Variation Figure 7. Gate Charge vs Gate-source Voltage Figure 9. Normalized Gate Thereshold Voltage vs Temperature Figure 10. Normalized BVDSS vs Temperature Figure 11. Normalized on Resistance vs Temperature Figure 12. Source-Drain Diode Forward Characteristics 6/14 STD100N03L - STD100N03L-1 Figure 13. Allowable Iav vs. Time in Avalanche 2 Electrical characteristics The previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: PD(AVE) =0.5*(1.3*BV DSS *I AV ) EAS(AR) =PD(AVE) *tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche 7/14 3 Test Circuits STD100N03L - STD100N03L-1 3 Test Circuits Figure 15. Gate Charge Test Circuit Figure 14. Switching Times Test Circuit For Resistive Load Figure 16. Test Circuit For Indictive Load Switching and Diode Recovery Times 8/14 STD100N03L - STD100N03L-1 4 Package Mechanical Data 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 4 Package Mechanical Data STD100N03L - STD100N03L-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 10/14 STD100N03L - STD100N03L-1 4 Package Mechanical Data TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 11/14 5 Packing mechanical data STD100N03L - STD100N03L-1 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 0.319 0.075 0.082 12/14 STD100N03L - STD100N03L-1 6 Revision History 6 Revision History Date 01-Sep-2005 14-Sep-2005 Revision 1 2 Initial release. Value changed on Figure 1 Changes 13/14 6 Revision History STD100N03L - STD100N03L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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